[9a-Z02-1~8] 15.4 III-V-group nitride crystals

[9a-Z02-4] Role of Mg-H in p-type Al_xGa_1-xN

〇Kengo Nagata^1,2,3, Hiroshi Miwa^2,3, Shinichi Matsui^2,3, Shinya Boyama^2,3, Yoshiki Saito^2,3, Hisayuki Miki^2,3, Yoshio Honda⁴, Hiroshi Amano^4,5,6 (1.Dept. of Electronics Nagoya Univ., 2.Toyoda Gosei Co., Ltd., 3.TS Opto Co., Ltd., 4.IMaSS, Nagoya Univ., 5.ARC, Nagoya Univ., 6.VBL, Nagoya Univ.)

Keywords:AlGaN, Mg-H, UV LED

Since the boundary of the Fermi level where H+ and H- are formed in GaN exists near 0.5 eV from the conduction band, it is considered that H+ is mainly formed during Mg doping. On the other hand, in AlN, which exists near 2.5 eV from the conduction band, H+ formation may be hindered by the growing Fermi level. In this study, formation of Mg-H complex in pAlGaN was evaluated by changing the growth conditions of pAlGaN.