Characterization of low loss structure in AlGaN UV-B lasar diode

Tomoya Omori; Sayaka Ishizuka; Shunya Tanaka; Kosuke Sato; Shinji Yasue; Yuya Ogino; Kazuki Yamada; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[9a-Z02-1~8] 15.4 III-V-group nitride crystals

Wed. Sep 9, 2020 9:00 AM - 11:30 AM Z02

Motoaki Iwaya(Meijo Univ.), Kazunobu Kojima(Tohoku Univ.)

11:00 AM - 11:15 AM

△ [9a-Z02-7] Characterization of low loss structure in AlGaN UV-B lasar diode

〇Tomoya Omori¹, Sayaka Ishizuka¹, Shunya Tanaka¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Kazuki Yamada¹, Shohei Teramura¹, Sho Iwayama^1,4, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,3, Hideto Miyake⁴ (1.Fac.Sci&Tec.,Meijo Univ., 2.Asahi-Kasei Corp., 3.Akasaki Reserch Center, Nagoya Univ., 4.Graduate School of Regional Innovation Studies, Mie Univ.)

Keywords:semiconductor, UV-B, AlGaN