Optimization of AlGaN-based UV-B laser diodes using GRIN-SCH structure

Shunya Tanaka; Kosuke Sato; Shinji Yasue; Yuya Ogino; Kazuki Yamada; Sayaka Ishizuka; Shohei Teramura; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[9a-Z02-1~8] 15.4 III-V-group nitride crystals

Wed. Sep 9, 2020 9:00 AM - 11:30 AM Z02

Motoaki Iwaya(Meijo Univ.), Kazunobu Kojima(Tohoku Univ.)

11:15 AM - 11:30 AM

△ [9a-Z02-8] Optimization of AlGaN-based UV-B laser diodes using GRIN-SCH structure

〇(M2)Shunya Tanaka¹, Kosuke Sato^1,2, Shinji Yasue¹, Yuya Ogino¹, Kazuki Yamada¹, Sayaka Ishizuka¹, Shohei Teramura¹, Sho Iwayama^1,3, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,4, Hideto Miyake³ (1.Fac. Sci & Tec., Meijo Univ., 2.Asahi-Kasei Corp., 3.Graduate School of Regional Innovation Studies, Mie Univ., 4.Akasaki Research Center, Nagoya Univ.)

Keywords:semiconductor, UV-B, AlGaN