10:30 AM - 10:45 AM
[9a-Z07-6] Suppression of chemical reaction under ionic liquid gating of VO2 with a hBN insertion layer
Keywords:ionic liquid gating, hexagonal boron nitride, vanadium dioxide
Electrolyte gating has been reported to cause the modulation of physical properties due to chemical reactions. This chemical reaction is caused by the outflow of oxygen from the material to the ionic liquid. In this study, EDLT devices with hexagonal boron nitride (hBN) insert layer which shows excellent chemical stability and impermeability to ions have been fabricated and its chemical reaction suppression effect have been evaluated in terms of Raman spectra and electrical properties.