[9a-Z11-1~13] 12.4 Organic light-emitting devices and organic transistors

[9a-Z11-6] Time resolved analysis of pre-channel formation process in OTFT with extended time domain reflectometry

〇Masatoshi Sakai¹, Weisong Liao¹, Kyouhei Tanaka¹, Hiroaki Murakami¹, Kazuhiro Kudo¹ (1.Chiba Univ.)

Keywords:carrier injection, channel formation, TDR

We have observed the pre-channel formation process of top-contact and bottom-gate pentacene TFTs by using our extended time domain reflectometry in 10 nanosecond time resolution. We observed time lag between the reaching of the hole frontline to the semiconductor/insulator interface and the beginning of the hole diffusion toward the channel plane, and this time lag was explained by the time evolution of the hole distribution just before the channel formation.