[9a-Z29-1~14] 17.2 グラフェン

[9a-Z29-8] Temperature dependence of twisted graphene formation on graphene/silicon carbide template

〇姚 瑶¹、根岸 良太¹、高村 真琴²、谷保 芳孝²、小林 慶裕¹ (1.阪大、2.NTT物研)

キーワード：グラフェン形成

Twisted few layer graphene (FLG) has recently attracted great attention due to the appearance of the exotic electrical properties, such as superconductivity and Mott-like insulator [1]. In previous study [2], we reported that the FLG was synthesized by overlayer growth of graphene on a monolayer graphene template using a chemical vapor deposition (CVD) method [3]. We found that the grown 2D graphene islands have the random twisted angles due to the coalescence of islands, leading the formation of the weak interlayer coupling like a turbostratic stacking. In this study, to understand the growth mechanism of twisted FLG, we examined the temperature dependence systematically and proposed the vertical and lateral morphology model in graphene islands grown on graphene template.