[9p-Z01-1~18] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-Z01-10] Controllable sulfur dopant concentration in InP nanowires revealed by NanoSIMS with nanoscale spatial resolution

〇Guoqiang Zhang^1,2, Kouta Tateno^1,2, Takehiko Tawara^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, dopant

Vapor-liquid-solid (VLS) grown wires have become key components of various devices. To maximize potential capability of electrical and optical device performance, knowledge of dopant control information is of utmost important. Secondary ion mass spectroscopy (SIMS) method, a very powerful tool to investigate doping control, is typically used for film structure because of over hundreds of µm² analysis area. The method of embedding large-area wire ensemble into other matrix materials has therefore been developed to analyze dopant concentration in wires. However, to analyze dopant profile in single wires is considerably important. NanoSIMS, recently developed with sub-microscale spatial resolution, makes the measurement possible. We have applied the analysis method to InP wires for sulfur (S) dopant analysis in single wires. Here we report controllable S dopant concentration in VLS grown InP wires revealed by using NanoSIMS.