[9p-Z01-1~18] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

[9p-Z01-10] 自己触媒法InPナノワイヤ中の硫黄ドーピング濃度のNanoSIMS測定

〇章 国強^1,2、舘野 功太^1,2、俵 毅彦^1,2、後藤 秀樹¹ (1.NTT物性研、2.NTTナノフォトセンタ)

キーワード：半導体, ナノワイヤ, ドーパント

Vapor-liquid-solid (VLS) grown wires have become key components of various devices. To maximize potential capability of electrical and optical device performance, knowledge of dopant control information is of utmost important. Here we report controllable S dopant concentration in VLS grown InP wires revealed by using NanoSIMS.