[9p-Z01-1~18] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-Z01-12] Impact of dislocations in InAs/GaAs quantum dot structures on their optical properties

〇Shigekazu Okumura^1,2, Kazuki Fujisawa¹, Masaomi Yamaguchi¹, Tamami Naruke¹, Kenichi Nishi¹, Keizo Takemasa¹, Mitsuru Sugawara¹, Masakazu Sugiyama² (1.QD laser, 2.RCAST Univ. of Tokyo)

Keywords:MBE, Quantum dots, Photoluminescence

Impact of the growth temperature of InAs quantum dots (QDs) on GaAs(001) with InGaAs strain reducing layer (SRL) on structural and optical properties was investigated. Dislocations formed by the strain accumulation at InAs QDs were observed in InGaAs SRL or GaAs spacer layer, especially at lower or higher growth temperature. Carrier lifetime at room temperature was longer in the case dislocation density was lower. Dislocations predominantly act as nonradiative center in InAs/GaAs QDs structures. Optimization of growth temperature is important for high quality QD structure.