The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-Z01-1~18] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01

Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)

5:30 PM - 5:45 PM

[9p-Z01-17] The Effect of Gas Sequence of Multi Quantum Well Growth to Luminescence

Maui Hino1, Warakorn Yanwachirakul2, Kentaroh Watanabe2, Yoshiaki Nakano1, Masakazu Sugiyama2,1 (1.Tokyo Univ., 2.RCAST)

Keywords:Quantum well

In the crystal growth of the multiple quantum well structure, it is important to control the hetero interface and reduce the crystal defects. In this study, Ga and As are purged before and after InGaAs well growth and evaluated the PL intensity and peak wavelangth. I will discuss more at the conference.