[9p-Z01-1~18] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9p-Z01-18] Gas flow sequence optimization of InGaAs/InP structure by using machine learning

〇Ryo Nakao¹, Yuki Wakabayashi², Takuma Otsuka³, Takuya Otsuka¹, Tomonari Sato¹, Hiroki Sugiyama¹ (1.NTT Device Technology Labs., 2.NTT Basic Research Labs., 3.NTT Communication Science Labs.)

Keywords:epitaxial growth, machine learning

機械学習によりMOCVD法による結晶成長条件の最適化を行った。