Photoluminescence characteristics of heavily Be doped GaAsN

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01

Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)

12:45 PM - 1:00 PM

〇Takuma Fujimoto¹, Takashi Tsukasaki¹, Naoki Shiino¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

Keywords:GaAsN, photoluminescence, heavily doped