12:45 PM - 1:00 PM
[9p-Z01-2] Photoluminescence characteristics of heavily Be doped GaAsN
Keywords:GaAsN, photoluminescence, heavily doped
Oral presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01
Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)
12:45 PM - 1:00 PM
Keywords:GaAsN, photoluminescence, heavily doped