Selective-area growth and characterization of InAs/GaSb core-shell nanowires on Si

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01

Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)

3:00 PM - 3:15 PM

〇Hironori Gamo¹, Lian Chen¹, Yu Katsumi¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.RCIQE)

Keywords:nanowire, epitaxy