[9p-Z02-1~6] Functionality and science of transparent crystals: Ecosystems created by deep ultraviolet emitters

[9p-Z02-2] Control of defects and electrical properties in AlGaN transparent crystals

〇Hiroshi Fujioka¹, Kohei Ueno¹, Atsushi Kobayashi¹ (1.Univ. of Tokyo)

Keywords:nitride semiconductor, widegap semiconductor, AlGaN

It is well known that compensation defects are generated with the increase in Al composition during growth of AlGaN wide-gap semiconductors, which makes it difficult to grow crystals with high perfection and good electrical properties. The combination of pseudo-Fermi level control by vacuum ultraviolet light irradiation from low-pressure discharges with the low temperature growth technique was found to be quite effective in reducing compensation defects