[9p-Z02-1~6] Functionality and science of transparent crystals: Ecosystems created by deep ultraviolet emitters

[9p-Z02-3] Influence of unintentional doping on deep UV laser diode properties

〇Yoshihiro Kangawa^1,2 (1.RIAM, Kyushu Univ., 2.IMaSS, Nagoya Univ.)

Keywords:Deep UV laser diode, AlGaN

Current simulation using DUV AlGaN laser diode structure was performed based on one-dimensional drift diffusion method. Process simulation of AlGaN MOVPE was also carried out to predict unintentional doping density. In this presentation, influence of unintentional doping on DUV laser diode properties is discussed.