[9p-Z08-1~7] ここまで来た不揮発性メモリ技術 - スピン、相変化、抵抗変化、強誘電体、それぞれの強み

[9p-Z08-1] MRAM’s Journey to Becoming a Mainstream Memory

〇Sumio Ikegawa¹、Frederick B. Mancoff¹、Jason Janesky¹、Sanjeev Aggarwal¹ (1.Everspin Technologies, Inc.)

キーワード：magnetoresistive random access memory, spin-transfer torque, non-volatile memory

Magnetoresistive random access memory (MRAM) has the key characteristics of high speed and robust endurance compared with other non-volatile memory technologies. Since the first commercial MRAM was launched in 2006, the memory capacity and market size have greatly expanded. In 2019, there were two landmark events in the history of MRAM: Everspin reached a major milestone by launching a 1Gb product, and three major foundries and two other companies announced the availability of products. These indicate that MRAM is a promising candidate for a mainstream memory technology. In this paper, we focus on the technologies for MRAM commercialization: introducing current MRAM products and their technologies, discussing technological challenges for the next generation products, and reviewing new magnetization switching mechanisms from the product point of view.