2:00 PM - 2:30 PM
[9p-Z08-2] ReRAM technology and its new development, -From non-volatile memory to AI and sensing technology
Keywords:ReRAM, neural network, hydrogen sensor
Currently, non-volatile memory is being researched and developed for various applications as well as memory. At our company Panasonic, we are developing and mass producing ReRAM (Resistive Random Access Memory).
ReRAM that forms a filament in a two-layer tantalum oxide (TaO) structure, has property that we can control its resistivity not only digitally but also analogically. We utilize this property to an accelerator (RAND, Resistive Analog Neuro Device) for AI calculation represented by a neural network.
Another property our ReRAM has is that its resistivity is related with Redox reaction, which means it has sensitivity with hydrogen. We are developing hydrogen sensing solutions (ReH sensor).
This presentation introduces ReRAM device technology and these two applied technologies.
ReRAM that forms a filament in a two-layer tantalum oxide (TaO) structure, has property that we can control its resistivity not only digitally but also analogically. We utilize this property to an accelerator (RAND, Resistive Analog Neuro Device) for AI calculation represented by a neural network.
Another property our ReRAM has is that its resistivity is related with Redox reaction, which means it has sensitivity with hydrogen. We are developing hydrogen sensing solutions (ReH sensor).
This presentation introduces ReRAM device technology and these two applied technologies.