[9p-Z11-1~17] 12.4 Organic light-emitting devices and organic transistors

[9p-Z11-14] Analysis of Phase Transition Transistor based on the Numerical Metal-Insulator Phase Transition Model

〇Riku Takeda¹, Teruki Sano¹, Ryoma Ishii¹, Hiroki Watanabe¹, Masatoshi Sakai¹, Hyuma Masu², Kazuhiro Kudo¹ (1.Chiba Univ., 2.CAI, Chiba Univ.)

Keywords:Strongly Correlated Material, Charge Order, transistor

To explain the metal-insulator phase transition of the charge-ordered material of alpha-(BEDT-TTF)2I3, a simple numerical calculation model that the entire crystal becomes an insulator while the insulating phase domain grows in the metallic phase with decreasing temperature was established. We obtained calculated results that can explain the experimentally observed temperature dependence of the bulk resistivity well. Moreover, based on this model, we also analyzed the FET characteristics of the metal-insulator phase transition FET fabricated in our laboratory.