The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

12 Organic Molecules and Bioelectronics » 12.4 Organic light-emitting devices and organic transistors

[9p-Z11-1~17] 12.4 Organic light-emitting devices and organic transistors

Wed. Sep 9, 2020 1:30 PM - 6:00 PM Z11

Takehiko Mori(Tokyo Tech), Hiroyuki Matui(Yamagata Univ.)

5:00 PM - 5:15 PM

[9p-Z11-14] Analysis of Phase Transition Transistor based on the Numerical Metal-Insulator Phase Transition Model

Riku Takeda1, Teruki Sano1, Ryoma Ishii1, Hiroki Watanabe1, Masatoshi Sakai1, Hyuma Masu2, Kazuhiro Kudo1 (1.Chiba Univ., 2.CAI, Chiba Univ.)

Keywords:Strongly Correlated Material, Charge Order, transistor

To explain the metal-insulator phase transition of the charge-ordered material of alpha-(BEDT-TTF)2I3, a simple numerical calculation model that the entire crystal becomes an insulator while the insulating phase domain grows in the metallic phase with decreasing temperature was established. We obtained calculated results that can explain the experimentally observed temperature dependence of the bulk resistivity well. Moreover, based on this model, we also analyzed the FET characteristics of the metal-insulator phase transition FET fabricated in our laboratory.