[9p-Z16-1~14] 4.1 Plasmonics and Nanophotonics

▲ [9p-Z16-11] Optoelectronic memory device via electrically controlling phase change material with near-infrared response

〇(M2)HsinHua Chen¹, KuoPing Chen² (1.Institute of Photonic System, National Chiao Tung University, Taiwan, 2.Institute of Imaging and Biomedical Photonics, National Chiao Tung University, Taiwan)

Keywords:Vanadium dioxide, Memory device, Electrically tuning

In this research, a volatile memory device based on a phase change material (PCM) was demonstrated. Via electrically tuning the temperature of VO₂ thin films, near-infrared optical transmittance is recorded to display the different optoelectronics memory states.