[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1] [The 10th Compound Semiconductor Electronics Achievement Award Speech] Development of Novel Technologies in GaAs-, ZnSe-, and Oxide-Based Semiconductor Growths

〇Shizuo Fujita¹ (1.Kyoto Univ.)

Keywords:semiconductor, crystal growth, mist CVD

It is my great honor to be a recipient of this award. I have continued my research aiming at exploring novel ways in well-matured compound semiconductor growths technologies, in the view points of what I can do as a university researcher for the social and academic requirements. I have contributed to the GaAs-based semiconductor growths with organic sources for arsenic, the ZnSe-based semiconductor photo-assisted growths, including successful p-type doping, and the oxide-based semiconductor growths by mist CVD. Mist CVD may be a technology suitable for the growth of high-quality oxide semiconductors and will continue further developments.