The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

2:00 PM - 2:15 PM

[9p-Z20-4] Analyses of deep traps in n-type α-Ga2O3 by photocapacitance method

〇Hitoshi Takane1, Kentaro Kaneko1, Takashi Shinohe2, Shizuo Fujita1 (1.Kyoto Univ., 2.FLOSFIA INC.)

Keywords:Gallium oxide, Photocapacitance, deep trap

There are not many reports about deep traps in α-Ga2O3, and no reports covering whole bandgap. It is necessary to analyze existence, the energy level, and the origin of deep traps in deeper level. In this study, by using Photocapasitance measurement, deep traps were analyzed for the energy ranges between a 1.5 eV lower from the bottom of conduction band and the top of valence band.