The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

3:30 PM - 3:45 PM

[9p-Z20-9] Local electronic structure of hydrogen in wide-gap semiconductor β-Ga2O3

〇Masatoshi Hiraishi1, Hirotaka Okabe1, Akihiro Koda1,2, Ryosuke Kadono1,2, Keisuke Ide3, Toshio Kamiya3,4, Hideo Hosono3,4 (1.KEK-IMSS, 2.Sokendai, 3.Tokyo Tech MSL, 4.Tokyo Tech (MCES))

Keywords:Ga2O3, Hydrogen, Muon

To investigate the electronic states of the impurity hydrogen in \β-Ga2O3, we conducted muon spin rotation experiments to investigate the electronic states of muons as pseudo hydrogen. In combination with the simulation by DFT calculation, it was found that a part of the spectrum corresponds to the local structure in the case of OH bond with 3-coordinated oxygen. In the lecture, we will discuss the electronic state of hydrogen in the dilute limit from the temperature dependence and the simulation results of other hydrogen site candidates.