The 81st JSAP Autumn Meeting, 2020

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Oral presentation

11 Superconductivity » 11.1 Fundamental properties

[9p-Z27-1~24] 11.1 Fundamental properties

Wed. Sep 9, 2020 1:00 PM - 7:45 PM Z27

Toshinori Ozaki(Kwansei Gakuin Univ.), Masanori Nagao(Univ. of Yamanashi), Kazuhiro Yamaki(Utsunomiya Univ.), Fujioka Masaya(Hokkaido Univ.)

5:15 PM - 5:30 PM

△ [9p-Z27-16] Carrier density dependence of the electronic transport properties of NdFeAsO thin films

〇Keisuke Kondo1, Mingyu Chen1, Takafumi Hatano1, Kazamasa Iida1,2, Hiroshi Ikuta1 (1.Nagoya Univ., 2.JST CREST)

Keywords:Fe-based superconductors, thin films, hydrogen doping

We have investigated the electrical transport properties of NdFeAs(O,H) epitaxial thin films and compared them with those of NdFeAs(O,F) thin films. By changing the doping element from F to H, higher concentration of electron doping can be realized, which enables to investigate the electron concentration dependence of electronic transport characteristics of NdfeAsO thin films. The irreversibility fields of NdFeAs(O,H) are higher than those of NdFeAs(O,F) for both main crystallographic orientations. This may be due to the decrease in the electromagnetic anisotropy, which was similarly observed in cuprates with over-doping. The self-field critical current density Jc was in excess of 17 MA/cm2 at 4 K, which is more than twice as large as that of NdFeAs(O,F).