Masahiro Mori

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Speaker, Author, Co-Author

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

4:15 PM - 4:30 PM

[12p-B401-12] Reduction of Contact Resistance for N-polar GaN HEMT fabrication process by using ion implantation

〇(M1)Masahiro Mori¹, Akihiro Hayasaka¹, Isao Makabe², Shigeki Yoshida², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

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