3:45 PM - 4:00 PM [14p-A302-8] [Highlight]Development of Maskless 3D Method to Produce High Quality GaN Substrates 〇Takehiro Yoshida1 (1.Sciocs)
4:00 PM - 4:15 PM [14p-A302-9] Properties of the Free-standing GaN Substrates Produced with the Maskless 3D Method 〇Takehiro Yoshida1 (1.Sciocs)