Anna Kafar

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 12:15 PM A302 (6-302)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15a-A302-1~12] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

▼ [15a-A302-5] InGaN quantum wells with spatially engineered indium content for broadening of nitride superluminescent diode emission spectra

〇Anna Kafar^1,2, Ryota Ishii¹, Krzysztof Gibasiewicz², Szymon Stanczyk², Szymon Grzanka^2,3, Mikiya Tano⁴, Atsushi Sakaki⁴, Tadeusz Suski², Piotr Perlin^2,3, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.IHPP PAS, 3.TopGaN Ltd., 4.Nichia Corp.)

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