Takeshi Senda

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:45 PM - 3:00 PM D411 (11-411)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[15p-D411-1~5] 15.7 Crystal characterization, impurities and crystal defects

1:45 PM - 2:00 PM

[15p-D411-1] Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus

〇Takeshi Senda¹, Shingo Narimatsu¹, Yoshiaki Abe¹, Susumu Maeda¹, Hisashi Matsumura¹, Takashi Isikawa¹, Kozo Nakamura² (1.GlobalWafers Japan, 2.Okayama Prefectural Univ.)

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