Takahiro Sawada

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Speaker, Author, Co-Author

Thu. Mar 12, 2020 1:15 PM - 5:30 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[12p-B401-1~16] 13.7 Compound and power electron devices and process technology

1:30 PM - 1:45 PM

△ [12p-B401-2] Basic Etching Characteristics of GaN by Neutral Beam

〇(B)Takahiro Sawada¹, Daisuke Ohori¹, Kenta Sugawara³, Masaya Okada³, Kazutaka Inoue³, Daisuke Sato⁴, Hideyuki Kurihara⁴, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.Sumitomo Electric Industries, Ltd, 4.SHOWA DENKO K.K.)

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