Takahiro Yamada

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 4:00 PM - 6:00 PM PA9 (PA)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[13p-PA9-1~25] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[13p-PA9-19] Evaluation of Trap Characteristics in High-frequency AlGaN/GaN HEMTs with High-resistivity GaN Buffer Layer by Low-frequency Y-parameter Measurements

〇Takahiro Yamada¹, Yumiko Kobayashi¹, Hisashi Saito¹, Tatsuro Watahiki¹, Eiji Yagyu¹, Mikio Yamamuka¹ (1.Mitsubishi Electric Corp.)