Rei Kawamura

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 12:15 PM A302 (6-302)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[15a-A302-1~12] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM

[15a-A302-3] Effect of InGaN underlyaer on emission intensity of InGaN/GaN quantum well

〇Rei Kawamura¹, Naoya Iwasaki², Yuki Inomata¹, Narihito Okada¹, Satoshi Kurai¹, Yoichi Yamada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ, 2.Department of Eng. Yamaguchi Univ.)

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