Dai Okamoto

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

4:45 PM - 5:00 PM

[15p-A201-15] Analysis of Interface Trap Generation during Negative Bias Stress in SiC MOSFETs by On-the-fly Charge Pumping Method

〇Dai Okamoto¹, Mitsuru Sometani², Hiroki Sakata¹, Xufang Zhang¹, Yuta Matsuya¹, Tetsuo Hatakeyama³, Mitsuo Okamoto², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1.U. Tsukuba, 2.AIST, 3.Toyama Pref. Univ.)

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