[13a-A302-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 9:00 AM - 12:00 PM A302 (6-302)

Kazunobu Kojima(Tohoku Univ.), Yoshio Honda(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [13a-A302-1] Enhanced Photoluminescence Efficiency in GaInN Green Light-emitting Diodes by n-GaN Surface Etching.

〇(B)Ryoto Fujiki¹, Dong-Pyo Han¹, Seiji Ishimoto¹, Ryoya Mano¹, Yusuke Ueshima¹, Ryo Takahashi¹, Shintaro Ueda¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo univ., 2.ARC,Nagoya univ.)

9:15 AM - 9:30 AM

△ [13a-A302-2] Electroluminescence from Polar-Plane-Free Faceted InGaN LEDs

〇Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

[13a-A302-3] InGaN-based Red LEDs (I) Effect of in-plane residual stress

Daisuke Iida¹, Zhe Zhuang¹, Pavel Kirilenko¹, Martin Velazquez-Rizo¹, 〇Kazuhiro Ohkawa¹ (1.KAUST)

9:45 AM - 10:00 AM

[13a-A302-4] InGaN-based Red LEDs (Ⅱ) low-operation voltage

Daisuke Iida¹, Zhe Zhuang¹, Pavel Kirilenko¹, Martin Velazquez-Rizo¹, 〇Kazuhiro Ohkawa¹ (1.KAUST)

10:00 AM - 10:15 AM

[13a-A302-5] Stacked three-colored light emitting diodes using Eu-doped GaN and InGaN quantum wells

〇Shuhei Ichikawa¹, Keishi Shiomi¹, Takaya Morikawa¹, Yutaka Sasaki¹, Dolf Timmerman¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

10:15 AM - 10:30 AM

△ [13a-A302-6] Development of Transverse Quasi-Phase-Matched GaN Waveguide-Type Wavelength Conversion Device

〇Tenta Komatsu¹, Toshiki Hikosaka², Shinya Nunoue², Masahiro Uemukai¹, Tanikawa Tomoyuki¹, Katayama Ryuji¹ (1.Osaka Univ., 2.Toshiba Corp.)

10:45 AM - 11:00 AM

[13a-A302-7] Directional Control of MicroLED using integrated micorlens

〇(M1)Kosuke Iwanaga¹, Fujiwara Shinjiro¹, Shirai Masanori², Takasawa Satoru², Sekiguchi Hiroto^1,3 (1.Toyohashi Tech., 2.ULVAC, 3.JST PRESTO)

11:00 AM - 11:15 AM

[13a-A302-8] Transfer technology of MicroLED on PDMS sheet for flexible electronics application

〇(M1)Riki Maeda¹, Kaito Masuda¹, Atsushi Nishikawa², Alexander Loesing², Izumi Hukunaga³, Hiroto Sekiguchi^1,4 (1.Toyohashi Tech, 2.ALLOS, 3.OIST, 4.JST PRESTO)

11:15 AM - 11:30 AM

△ [13a-A302-9] Fabrication of hybrid neural probe with blue MicroLED and neural electrode

〇Hiroki Yasunaga^1,3, Yusei Nakayama¹, Chihiro Inami², Masahiro Ohsawa², Hiroto Sekiguchi^1,3 (1.Toyohashi Tech, 2.Nagoya city Univ., 3.JST PRESTO)

11:30 AM - 11:45 AM

△ [13a-A302-10] Fabrication of AlGaN/GaInN/GaN HFET visible photosensors with short optical gate

〇(B)Yuya Yamada¹, Ryo Fujishima¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

11:45 AM - 12:00 PM

[13a-A302-11] In Composition Dependence of Photoelectrochemical Properties on Solar Water Splitting using InGaN Photoanodes

〇Junichi Nishinaka¹, Kazuhide Kumakura¹ (1.NTT BRL)

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