Session information

Poster presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[13p-PA4-1] Trench Patterning of Ge surface by Graphene-Assisted Chemical Etching

〇(M1)Ryo Mikurino¹, Ayumi Ogasawara¹, Tomoki Hirano¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[13p-PA4-2] Modeling of electron transmission and time-development of electron density distribution
in the nanoscale device under random impurity fluctuation with machine learning

Ryuho Nakaya¹, Souma Kawahara¹, Yoshitaka Itoh¹, Tota Suko², 〇Masakazu Muraguchi¹ (1.Hokkaido Univ. of Science, 2.Waseda Univ.)

1:30 PM - 3:30 PM

[13p-PA4-3] Effects of Interface Charge on Cellular Automaton Device Simulation of HEMT

〇Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kozo Makiyama², Junji Kotani² (1.AIST, 2.Fujitsu)

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Session information

[13p-PA4-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[13p-PA4-1] Trench Patterning of Ge surface by Graphene-Assisted Chemical Etching

[13p-PA4-2] Modeling of electron transmission and time-development of electron density distributionin the nanoscale device under random impurity fluctuation with machine learning

[13p-PA4-3] Effects of Interface Charge on Cellular Automaton Device Simulation of HEMT

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[13p-PA4-2] Modeling of electron transmission and time-development of electron density distribution
in the nanoscale device under random impurity fluctuation with machine learning