[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

Sat. Mar 14, 2020 9:30 AM - 11:15 AM A303 (6-303)

Ariyuki Kato(Nagaoka Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[14a-A303-1] Luminescence Enhancement of Implanted Pr in GaN Nanopillars at Room Temperature

〇Shinichiro Sato^1,2, Manato Deki³, Shuo Li², Hirotaka Watanabe³, Shugo Nitta³, Yosio Honda³, Tomoaki Nishimura⁴, Brant Gibson², Andrew Greentree², Hiroshi Amano³, Takeshi Ohshima¹ (1.QST, 2.CNBP, RMIT Univ., 3.IMaSS, Nagoya Univ., 4.Hosei Univ.)

9:45 AM - 10:00 AM

▲ [14a-A303-2] Ultrafast carrier dynamics and excitation efficiency of Eu³⁺ ions in GaN:Eu

〇Dolf Timmerman¹, Masaaki Ashida¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka University)

10:00 AM - 10:15 AM

▲ [14a-A303-3] Size dependence of quantum efficiency of red emission from GaN:Eu for application in micro-LEDs

〇(M2)Dido DeniervanderGon^1,2, Dolf Timmerman¹, Yoji Matsude¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Univ. of Amsterdam)

10:15 AM - 10:30 AM

△ [14a-A303-4] Enhanced near-infrared emission in Tm,Mg-codoped GaN

〇Ryota Komai¹, Naoki Yoshioka¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

[14a-A303-5] Crystal growth of quantum cascade laser with high Al composition InAlAs barrier

〇Kei Kaneko¹, Rei Hashimoto¹, Tsutomu Kakuno¹, Shinji Saito¹, Kazuaki Sakoda² (1.Toshiba, 2.NIMS)

10:45 AM - 11:00 AM

[14a-A303-6] [Highlight]Development of the surface-emitting Mid-IR quantum cascade lasers using photonic crystal

〇Rei Hashimoto¹, Tsutomu Kakuno¹, Kei Kaneko¹, Shinji Saito¹, Kazuaki Sakoda² (1.Toshiba Corp. CMC, 2.NIMS)

11:00 AM - 11:15 AM

[14a-A303-7] Photoluminescence of Er³⁺ doped Bi₂O₃ thin films sputter deposited with H₂O vapor gas

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

Session information

[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

[14a-A303-1] Luminescence Enhancement of Implanted Pr in GaN Nanopillars at Room Temperature

▲ [14a-A303-2] Ultrafast carrier dynamics and excitation efficiency of Eu³⁺ ions in GaN:Eu

▲ [14a-A303-3] Size dependence of quantum efficiency of red emission from GaN:Eu for application in micro-LEDs

△ [14a-A303-4] Enhanced near-infrared emission in Tm,Mg-codoped GaN

[14a-A303-5] Crystal growth of quantum cascade laser with high Al composition InAlAs barrier

[14a-A303-6] [Highlight]Development of the surface-emitting Mid-IR quantum cascade lasers using photonic crystal

[14a-A303-7] Photoluminescence of Er³⁺ doped Bi₂O₃ thin films sputter deposited with H₂O vapor gas

Authentication

Session information

[14a-A303-1~7] 13.8 Optical properties and light-emitting devices

[14a-A303-1] Luminescence Enhancement of Implanted Pr in GaN Nanopillars at Room Temperature

▲ [14a-A303-2] Ultrafast carrier dynamics and excitation efficiency of Eu3+ ions in GaN:Eu

▲ [14a-A303-3] Size dependence of quantum efficiency of red emission from GaN:Eu for application in micro-LEDs

△ [14a-A303-4] Enhanced near-infrared emission in Tm,Mg-codoped GaN

[14a-A303-5] Crystal growth of quantum cascade laser with high Al composition InAlAs barrier

[14a-A303-6] [Highlight]Development of the surface-emitting Mid-IR quantum cascade lasers using photonic crystal

[14a-A303-7] Photoluminescence of Er3+ doped Bi2O3 thin films sputter deposited with H2O vapor gas

Authentication

▲ [14a-A303-2] Ultrafast carrier dynamics and excitation efficiency of Eu³⁺ ions in GaN:Eu

[14a-A303-7] Photoluminescence of Er³⁺ doped Bi₂O₃ thin films sputter deposited with H₂O vapor gas