Saemi Takahashi¹, Tomoaki Ishitsuka², Nobuyuki Matsubayashi², 〇Toshihisa Tomie^2,3 (1.Univ. Tokyo GSAS, 2.AIST NERI, 3.CUST)

Saemi Takahashi¹, Tomoaki Ishitsuka², Nobuyuki Matsubayashi², 〇Toshihisa Tomie^2,3 (1.Univ. Tokyo GSAS, 2.AIST NERI, 3.CUST)

Bochao Li¹, Hao Li¹, Chang Yang¹, Boyu Ji¹, Jingquan Lin¹, 〇Toshihisa Tomie^1,2 (1.CUST, 2.AIST NERI)

〇Yoh Tanaka¹, Yusuke Yasutake¹, Susumu Fukatsu¹ (1.Tokyo Univ.)

〇Richard Murdey¹, Yasuhisa Ishikura¹, Yuko Matsushige¹, Kento Otsuka¹, Ruito Hashimoto¹, Minh Anh Truong¹, Tomoya Nakamura¹, Atsushi Wakamiya¹ (1.Kyoto Univ.)

〇Hironori Ogata^1,2,3, Tomoaki Nishimura³, Ryusuke Umeda^1,3 (1.Grad. Sch. Sci. Tech., Hosei Univ., 2.Research Center for Micro-Nano Tech., Hosei Univ., 3.Research Center of Ion Beam Tech., Hosei Univ.)

〇Yuji Yoshida¹, Tetsuhiko Miyadera¹, Yoshihiko Nishihara¹, Masayuki Chikamatsu¹, Tomoyuki Koganezawa² (1.AIST, 2.JASRI)

〇(B)Yuki Iida¹, Yuta Abe¹, Tomomasa Sato¹, Nobuyuki Matsuki¹ (1.Kanagawa Univ.)

〇Shuhei Okawa¹, Il Jeon¹, Ahmed Shawky¹, Seungju Seo¹, Taiki Inoue¹, Shohei Chiashi¹, Takeshi Tanaka², Hiromichi Kataura², Yutaka Matsuo^1,3, Shigeo Maruyama^1,2 (1.Univ. Tokyo, 2.AIST, 3.Nagoya Univ.)

〇Yutaka Matsuo^1,2, Hao-sheng Lin², Il Jeon², Shigeo Maruyama^2,3 (1.Nagoya Univ., 2.Univ. of Tokyo, 3.AIST)