〇Tadaaki Nagao¹ (1.NIMS)

〇Ikufumi KATAYAMA¹ (1.Yokohama Natl. Univ.)

〇Yasutaka IMANAKA^1,2 (1.NIMS, 2.Hokkaido Univ.)

〇Norio KUMADA¹ (1.NTT Basic Res. Labs.)

〇Shiqiang Mike LI¹, Parikshit Moitra¹, Rasna Veetil¹, Xinan Liang¹, Xuewu Xu¹, Shampy Mansha¹, Tobias Maas¹, Ramon Paniagua-Domingos¹, Arseniy Kuznetsov¹ (1.IMRE (A*STAR))

〇Junichiro KONO¹ (1.Rice University)

〇Satoshi Ishii^1,2,3, Zih-Ying Yang⁴, Thang Dao^1,5, Kuo-Ping Chen⁴, Tadaaki Nagao^1,6 (1.NIMS, 2.Univ. of Tsukuba, 3.JST-PRESTO, 4.NCTU, 5.Silicon Austria Labs, 6.Hokkaido Univ.)

〇(D)Orjan Handegard^1,2, Hai Dang Ngo^1,2, Tung Anh Doan², Thien Duc Ngo^1,2, Ramu Pasupathi Sugavaneshwar², Thang Duy Dao², Satoshi Ishii^2,3, Shigeki Otani², Tadaaki Nagao^1,2 (1.Hokkaido Univ., 2.National Institute for Materials Science (NIMS), 3.Tsukuba Univ.)

〇Govind Dayal Singh¹, Ikki Morichika¹, Satoshi Ashihara¹ (1.Institute of Industrial Science, The University of Tokyo)

〇Ikki Morichika¹, Satoshi Ashihara¹ (1.IIS, The Univ. of Tokyo)

〇Hiroaki Matsui¹, Miho Shoji², Satoko Higano² (1.The Univ. of Tokyo, 2.Mitsubishi Materials)

〇Hyunsoo Yang¹ (1.National Univ. of Singapore)

〇Toshiharu Saiki¹, Masashi Kuwahara² (1.Keio Univ., 2.AIST)

〇Satoshi Ashihara¹ (1.The Univ. of Tokyo)