[12a-A301-1~5] Development of multinary compounds based on engineering for diverse stable phases -Future Materials Exploring Initiative ~Future of Environment and Energy Materials~ -

[12a-A301-4] Phase-controlled epitaxy of ultra-wide bandgap semiconductor Ga₂O₃

〇Yuichi Oshima¹ (1.NIMS)

Keywords:Ga2O3, Meta-stable, HVPE

Meta-stable Ga₂O₃, such as α-, γ-, κ-Ga₂O₃, are ultra-wide bandgap semiconductors as well as the stable β-Ga₂O₃, which has been intensively investigated for future power device applications. On top of that, meta-stable Ga₂O₃ have unique advantages as electronic materials. To realize high-performance and practical power devices using these materials, it is essential to establish an epitaxial growth technique that enables the growth of phase-controlled high-quality films. In the present work, we overview state-of-the-art technologies for the phase control and improvement of crystal quality mainly by halide vapor phase epitaxy.