Study on crystal growth of n-GaN for nanowire optical device using multiple-quantum-shell/tunnel junction

Yoshiya Miyamoto; Nanami Goto; Naoki Sone; Kazuyoshi Iida; Weifang Lu; Hideki Murakami; Mizuki Terazawa; Kazuma Ito; Renji Okuda; Masaki Ohya; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-A302-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2020 9:00 AM - 12:15 PM A302 (6-302)

Atsushi Kobayashi(Univ. of Tokyo), Tomoyuki Tanikawa(Osaka Univ.)

11:45 AM - 12:00 PM

△ [12a-A302-11] Study on crystal growth of n-GaN for nanowire optical device using multiple-quantum-shell/tunnel junction

〇Yoshiya Miyamoto¹, Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^4,1, Weifang Lu¹, Hideki Murakami¹, Mizuki Terazawa¹, Kazuma Ito¹, Renji Okuda¹, Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing Co., Ltd., 4.Toyoda Gosei Co., Ltd.)

Keywords:Nanowire, GaN