Device characterization of nanowire-LED using multiple-quantum-shell/tunnel junction

Naoki Sone; Nanami Goto; Yoshiya Miyamoto; Hideki Murakami; Mitsuki Terazawa; Kazuyoshi Iida; Ohya Masaki; Weifang Lu; Satoshi Kamiyama; Testuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-A302-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2020 9:00 AM - 12:15 PM A302 (6-302)

Atsushi Kobayashi(Univ. of Tokyo), Tomoyuki Tanikawa(Osaka Univ.)

12:00 PM - 12:15 PM

[12a-A302-12] Device characterization of nanowire-LED using multiple-quantum-shell/tunnel junction

〇Naoki Sone^1,3, Nanami Goto³, Yoshiya Miyamoto³, Hideki Murakami³, Mitsuki Terazawa³, Kazuyoshi Iida^2,3, Ohya Masaki^2,3, Weifang Lu³, Satoshi Kamiyama³, Testuya Takeuchi³, Motoaki Iwaya³, Isamu Akasaki^3,4 (1.KOITO MANUFACTURING Co., Ltd, 2.TOYODA GOSEI Co., Ltd,, 3.Meijo University, 4.Akasaki Research Center, Nagoya University)

Keywords:nanowire, GaN