[12a-A302-1~12] 15.4 III-V-group nitride crystals

[12a-A302-6] CVD growth of BN thin films by alternate gas supply

〇Hisashi Yamada¹, Sho Inotsume^1,2, Toshikazu Yamada¹, Mitsuaki Shimizu^1,2 (1.AIST-NU GaN-OIL, 2.Nagoya Univ.)

Keywords:h-BN, CVD, B2H6

Hexagonal boron nitride (h-BN) is a wide band gap semiconductor (up to 6 eV) having a layered structure. There are expectations such as a deep ultraviolet light emitting element material, a graphene semiconductor gate insulating film, and a GaN-based semiconductor release layer. We reported that the h-BN thin film by chemical vapor deposition (CVD) using diborane (B2H6) as the B material and found that a two-order of magnitude lower C concentrations compared to trimethylboron (TMB, (CH3) 3B). In this report, we report the characteristic results of h-BN thin films formed by changing the supply conditions of source gas.