[12a-A409-1~9] 12.4 有機EL・トランジスタ

▲ [12a-A409-2] Fabrication of Cd-free Quantum Dot Light Emitting Diodes
by varying the thickness of sputtered Zinc Oxide layer

〇(D)Mohammad MostafizurRahman Biswas¹、Okada Hiroyuki¹ (1.University of Toyama)

キーワード：Quantum Dot Light Emitting Diodes, Sputtered Zinc Oxide layer, Inverted structure

Quantum dot (QD) light emitting diode (QLED) is one of the emerging research fields due to rapid growth of display industries [1]. Consequently, many researchers are trying to improve the different sections of the QLEDs, considering the luminance and efficient electron and hole-transport. From the early age of the QLED system, most of the efficient QLEDs are dependent on the Cd-based QDs. However, the Cd substances will cause serious environment and human health issues [2]. Therefore, at present, most of the researchers are trying to improve the use of Cd free QDs. Up to now, researchers are struggling with quantum dot light emitting devices, related to yellow/orange emission [3]. Besides, the lucrative luminance and efficiency of QD device is obtained using the inverted structure [4]. Additionally, the inverted structure is mainly focused on the oxide layer, generally, used as electron transport layer (ETL). The most attractive oxide base semiconductor materials are ZnO [4] and TiO₂. In this research work, we have preliminary fabricated QLED, where, the sputtered ZnO film was used as electron transport material, where the ZnO thickness was considered with the luminance (L) and current density (J) using ZnCuInS QDs.