[12a-B410-1~8] 3.7 Laser processing

[12a-B410-7] Investigation of electric properties of 4H-SiC doped by laser ablation of thin films

〇Toshifumi Kikuchi^1,2, Kaname Imokawa², Akihiro Ikeda³, Daisuke Nakamura¹, Tanemasa Asano¹, Hiroshi Ikenoue^1,2 (1.Grad. Sch. ISEE. Kyushu Univ., 2.Department of Gigaphoton Next GLP, Kyushu Univ., 3.Department of Computer and Information Sciences, Sojo Univ.)

Keywords:laser, semiconductor, SiC

Previous reports, a impurities source film containing as p-type and n-type dopants was formed on a 4H-SiC substrate, and laser ablation was performed. Ion implantation has been achieved to 4H-SiC by laser ablation In an inert gas. In this report, we developed a selective doping method using a resist film and made it possible to perform laser doping that is optimal for Hall effect measurement. We report the activation rate of dopants in 4H-SiC as measured by the Hall effect measurement.