2020年第67回応用物理学会春季学術講演会

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一般セッション(口頭講演)

3 光・フォトニクス » 3.9 テラヘルツ全般

[12a-B414-1~10] 3.9 テラヘルツ全般

2020年3月12日(木) 09:00 〜 11:45 B414 (2-414)

諸橋 功(情通機構)、瀧田 佑馬(理研)

11:30 〜 11:45

[12a-B414-10] Enhancement in thermal responsivities of MEMS bolometers by introducing a critical buckling strain

〇(D)Boqi Qiu1、Ya Zhang2、Naomi Nagai1、Kazuhiko Hirakawa1 (1.IIS, Univ. of Tokyo、2.TUAT)

キーワード:Terahertz bolometer, MEMS resonator, critical buckling strain

Terahertz (THz) detector is one of the crucial components in the THz technologies. Recently, we reported a room temperature, high speed THz bolometer using a GaAs doubly clamped MEMS beam resonator. When the doubly clamped MEMS beam is heated by THz radiation, a thermal stress is induced in the MEMS beam and its resonance frequency decreases. The present device detects the frequency reduction induced by heating and works as a very sensitive thermometer. The thermal responsivity, R, can be improved by modifying the MEMS beam dimensions. A longer MEMS beam accumulates more heat and shows a higher thermal responsivity. However, its response time increases. In this report we propose a new method to improve R without deteriorating the detection speed, by introducing a preloaded compressive strain in the MEMS beam.