The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

3 Optics and Photonics » 3.9 Terahertz technologies

[12a-B414-1~10] 3.9 Terahertz technologies

Thu. Mar 12, 2020 9:00 AM - 11:45 AM B414 (2-414)

Isao Morohashi(NICT), Yuma Takida(RIKEN)

11:00 AM - 11:15 AM

[12a-B414-8] Photovoltage Output from Gate Electrode of a Grating-Gate Plasmonic THz Detector

Takumi Negoro1, Taku Saito1, Masaya Suzuki1, Tomotaka Hosotani1, Tetsuya Suemitsu2, Yuma Takida3, Hiromasa Ito3, Hiroaki Minamide3, Taiichi Otsuji1, Akira Satou1 (1.Tohoku Univ. RIEC, 2.Tohoku Univ. CIES, 3.RIKEN Advanced Photonics)

Keywords:THz detection, Plasmon, HEMT

We have developed grating-gate plasmonic THz detectors, which are promising as room-temperature-operating, sensitive, high-speed THz detectors. In a conventional way, the photovoltage generated in a detector channel is output from the drain electrode. In this case, the photovoltage is proportional to the channel length only and is independent of the channel width, resulting in the output signal not proportional to the active area size. In this study, we theoretically show that the output is expected to be proportional to the active area size in case where the photocurrent is extracted from the gate electrode as a displacement current, leading to the greater output enhancement. Also, we experimentally show that the gate electrode of a grating-gate plasmonic THz detector works as an output port.