[12a-D215-1~8] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [12a-D215-1] Photoluminescence Intensity Change of InGaAsN Quantum Well by Laser Irradiation

〇(D)Md Zamil Sultan^1,2、Shuhei Yagi¹、Kengo Takamiya¹、Hiroyuki Yaguchi¹ (1.Saitama Univ.、2.Haj. Dan. Sci. & Tech. Univ.(HSTU))

キーワード：Photoluminescence degradation, Quantum Well, Defects, Laser irradiation

Detailed micro PL measurements were carried out to investigate the change in the PL intensity from InGaAsN quantum well (QW) structure by laser irradiation at room temperature. The PL degradation is relatively constant for all laser power densities. Stronger laser irradiation was found to lead to faster decrease in the PL intensity. The way proposed in this study would be very useful to evaluate potential defect generation which causes the deterioration of optoelectronic device during the operation.