The 67th JSAP Spring Meeting 2020

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-D215-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Mar 12, 2020 9:30 AM - 11:45 AM D215 (11-215)

Tetsuya Takeuchi(Meijo Univ.), Masamitsu Takahasi(QST)

10:45 AM - 11:00 AM

[12a-D215-5] Molecular beam epitaxial growth conditions of low-temperature-grown GaAs1-xBix

〇Yoriko Tominaga1, Yukihiro Horita1, Yuto Takagaki1, Mitsuki Yukimune2, Ryo Fujiwara2, Fumitaro Ishikawa2 (1.Hiroshima Univ., 2.Ehime Univ.)

Keywords:Bi-containing III-V compound semiconductors, Low-temperature growth