[12a-D215-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-D215-6] Effect of Bi flux on the growth of GaAs / GaAsBi core-shell nanowires

〇Shota Mori¹, Rikuo Tsutsumi¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime University)

Keywords:semiconductor, GaAsBi, nanowires

Attempt to grow GaAs-based core-shell nanowires with GaAsBi in the shell layer prepared by molecular beam epitaxy.