11:15 AM - 11:30 AM
△ [12a-D215-7] Selective-area growth of InAs/GaSb core-shell nanowires on Si
Keywords:nanowire, InAs/GaSb
Presentation information
Oral presentation
15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
[12a-D215-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy
Thu. Mar 12, 2020 9:30 AM - 11:45 AM D215 (11-215)
Tetsuya Takeuchi(Meijo Univ.), Masamitsu Takahasi(QST)